? semiconductor components industries, llc, 2017 march, 2017 ? rev. 3 1 publication order number: NSPM2051/d NSPM2051 esd & surge protection device features ? protection for the following iec standards: iec61000?4?2 level 4: 30 kv contact discharge iec61000?4?5 (lightning) 100 a (8/20 s) ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit iec 61000?4?2 (esd) contact air 30 30 kv operating junction and storage temperature range t j , t stg ?65 to +150 c maximum peak pulse current 8/20 s @ t a = 25 c i pp 100 a stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. device package shipping ? ordering information www. onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. NSPM2051mut5g udfn2 (pb?free) 8000 / tape & reel marking diagram udfn2 case 517cz m2m m2 = specific device code m = date code 1 cathode 2 anode
NSPM2051 www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current *see application note and8308/d for detailed explanations of datasheet parameters. uni?directional tvs i pp i f v i i r i t v rwm v c v br v f electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol conditions min typ max unit reverse working voltage v rwm 5.0 v breakdown voltage (note 1) v br i t = 1 ma 5.1 7.0 v reverse leakage current i r v rwm = 5.0 v 0.1 a clamping voltage (note 2) v c i pp = 40 a, t p = 8 x 20 s 7.5 v clamping voltage (note 2) v c i pp = 80 a, t p = 8 x 20 s 9.5 v clamping voltage (note 2) v c i pp = 100 a, t p = 8 x 20 s 10.5 v junction capacitance c j v r = 0 v, f = 1 mhz 380 pf product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. breakdown voltage is tested from pin 1 to 2. 2. non?repetitive current pulse at t a = 25 c, per iec61000?4?5 waveform, see figure 10. figure 1. esd clamping voltage positive 8 kv contact per iec61000?4?2 figure 2. esd clamping voltage negative 8 kv contact per iec61000?4?2 time (ns) time (ns) 150 125 100 75 50 25 0 ?25 ?5 0 5 10 20 25 35 45 100 80 60 120 40 20 0 ?20 ?50 ?30 ?20 ?10 0 10 20 voltage (v) voltage (v) 15 30 40 ?40
NSPM2051 www. onsemi.com 3 figure 3. positive tlp i?v curve figure 4. clamping voltage vs. peak pulse current (t p = 8/20 s) i pk (a) v c @ i pk (v) 18 16 14 12 10 8 6 4 2 0 012 45 8 6 v c @ i pk (v) i pk (a) 080 70 10 20 30 40 60 50 11 1 10 8 6 4 2 0 figure 5. cv characteristics c (pf) v bias (v) 500 400 350 300 200 150 50 0 0 1.0 2.0 3.0 4.0 0.5 5.0 130 90 1.5 2.5 3.5 4.5 37 100 110 120 9 7 5 3 100 250 450 140
NSPM2051 www. onsemi.com 4 transmission line pulse (tlp) measurement transmission line pulse (tlp) provides current versus voltage (i?v) curves in which each data point is obtained from a 100 ns long rectangular pulse from a charged transmission line. a simplified schematic of a typical tlp system is shown in figure 6. tlp i?v curves of esd protection devices accurately demonstrate the product?s esd capability because the 10s of amps current levels and under 100 ns time scale match those of an esd event. this is illustrated in figure 7 where an 8 kv iec 61000?4?2 current waveform is compared with tlp current pulses at 8 a and 16 a. a tlp i?v curve shows the voltage at which the device turns on as well as how well the device clamps voltage over a range of current levels. for more information on tlp measurements and how to interpret them please refer to and9007/d. figure 6. simplified schematic of a typical tlp system dut l s oscilloscope attenuator 10 m v c v m i m 50 coax cable 50 coax cable figure 7. comparison between 8 kv iec 61000?4?2 and 8 a and 16 a tlp waveforms
NSPM2051 www. onsemi.com 5 iec 61000?4?2 spec. level test volt- age (kv) first peak current (a) current at 30 ns (a) current at 60 ns (a) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 i peak 90% 10% iec61000?4?2 w aveform 100% i @ 30 ns i @ 60 ns t p = 0.7 ns to 1 ns figure 8. iec61000?4?2 spec 50 50 cable tvs oscilloscope esd gun figure 9. diagram of esd test setup esd voltage clamping for sensitive circuit elements it is important to limit the voltage that an ic will be exposed to during an esd event to as low a voltage as possible. the esd clamping voltage is the voltage drop across the esd protection diode during an esd event per the iec61000?4?2 waveform. since the iec61000?4?2 was written as a pass/fail spec for larger systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. on semiconductor has developed a way to examine the entire voltage waveform across the esd protection diode over the time domain of an esd pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all esd protection diodes. for more information on how on semiconductor creates these screenshots and how to interpret them please refer to and8307/d. figure 10. 8 x 20 s pulse waveform 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s
NSPM2051 www. onsemi.com 6 package dimensions udfn2 1.6x1.0, 1.1p case 517cz issue b notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. a b e d bottom view b 2x 2x 0.08 c pin one reference top view 2x 0.08 c a a1 0.05 c 0.05 c c seating plane side view l 1 dim min max millimeters a 0.45 0.55 a1 ??? 0.05 b 0.83 0.93 d 1.60 bsc e 1.00 bsc e 1.10 bsc l 0.35 0.45 1 2x 0.58 dimensions: millimeters 1.00 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 2x e/2 e recommended a m 0.07 b c a m 0.07 b c 1.70 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NSPM2051/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
|
